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IRIS-X6757
Features
* 7-pin SIP type full molded package, optimum IC for low-height SMPS. * Oscillator is provided on the monolithic control with adopting On-Chip Trimming Technology * Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. * Low start-up circuit current (100uA max) *Avalanche energy guaranteed MOSFET with high VDSS The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. No VDSS de-rating is required. * Built-in constant voltage drive circuit * Built-in step drive circuit * Built-in low frequency PWM mode ( 22 kHz) * UVLO Burst Standby * Two operational modes by auto switching functions according to load TO-220 Fullpack (7 Lead) For middle~heavy load operation : QR mode For light~middle load operation : 1 Bottom Skip mode Key Specifications * Various kinds of protection functions Pulse-by-Pulse Overcurrent Protection (OCP) MOSFET RDS(ON) Overvoltage Protection with Latch mode (OVP) T ype VDSS(V) MAX AC input(V) Overload Protection with Latch mode (OLP) 230 15% The maximum limit of on-time IRIS-X6757 650 85 to 264
INTEGRATED SWITCHER
Package Outline
Pout(W) Note 1 300 180
Description
IRIS-X6757 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PWM) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external component count and simplifying the circuit design.
Typical Connection Diagram

Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant operation, and the peak power output is obtained by approximating 120 to 140 % of the above listed value. When the output voltage is low, and the ON-duty is narrow, the Pout (W) shall become lower than that of the above.
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IRIS-X6757
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol Definition IDpeak Drain Current * 1 IDMAX EAS Vcc VSSOLP IFB VFB VOCPBD PD1 PD2 TF Top Tstg Tch Maximum switching current *2 Single pulse avalanche energy *3 Input voltage for control part SS/OLP pin voltage FB pin inflow current FB pin voltage O.C.P/F.B pin voltage Power dissipation of MOSFET *4 Power dissipation for control part (MIC) *5 Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature Terminals 1-3 1-3 1-3 4-3 5-3 6- 3 6- 3 7- 3 1-3 4-3 Max. Ratings 18 18 326 35 -0.5 ~ 6.0 10 -0.5 ~ 9.0 -1.5 ~ 5.0 44 2.8 0.8 -20 ~ +125 -20 ~ +125 -40 ~ +125 150 Units A A mJ V V mA V V W W With infinite heatsink Without heatsink Specified by Vcc x Icc
Refer to recommended operating temperature within the limits of IFB
Note Single Pulse Ta=-20~+125 Single Pulse VDD=30V,L=50mH IL=3.53A
*1 Refer to MOS FET A.S.O. curve *2 Maximum switching current The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of the MOS FET. *3 Refer to MOS FET Tch-EAS curve *4 Refer to MOS FET Ta-PD1 curve
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IRIS-X6757
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25 , Vin=20V,unless otherwise specified)
Ratings Symbol Definition Terminals MIN Power Supply Start-up Operation TYP MAX Units Note
VCC(ON) VCC(OFF) ICC(ON) ICC(OFF) fosc VSSOLP(SS) ISSOLP(SS)
Operation Start Voltage Operation Stop Voltage Circuit Current in Operation Circuit Current in Non-Operation Oscillation Frequency Soft Start Operation Stop Voltage Soft Start Operation Charging Current
4-3 4-3 4-3 4-3 1-2 5-3 5-3
16.3 8.8 19 1.1 -710
18.2 9.7 22 1.2 -550
19.9 10.6 6 100 25 1.4 -390
V V mA A kHz V A
Vcc=0 20V Vcc=20 8.8V Vcc=15V -
Normal Operation
VOCPBD(BS1) VOCPBD(BS2) VOCPBD(LIM) IOCPBD VOCPBD(TH1) VOCPBD(TH2) VFB(OFF) IFB(ON)
Bottom-Skip Operation Threshold Voltage1 Bottom-Skip Operation Threshold Voltage2 Overcurrent Detection Threshold Voltage OCP/BD Pin Outflow Current Quasi-Resonant Operation Threshold Voltage 1 Quasi-Resonant Operation Threshold Voltage 2 FB Pin Threshold Voltage FB Pin Inflow Current (Normal Operation)
7-3 7-3 7-3 7-3 7-3 7-3 6-3 6-3
-0.72 -0.485 -0.995 -250 0.28 0.67 1.32 600
-0.665 -0.435 -0.94 -100 0.4 0.8 1.45 1000
-0.605 -0.385 -0.895 -40 0.52 0.93 1.58 1400
V V V A V V V A
-
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IRIS-X6757
Electrical Characteristics (for Control IC), Contd.
Stand-by Operation
VCC(S) VCC(SK) ICC(S) IFB(S) VFB(S) TON(MIN)
Stand-by Operation Start Voltage Stand-by Operation Start Voltage Interval Stand-by Non-Operation Circuit Current FB Pin Inflow Current (Stand-by) Stand-by Operation FB Pin Threshold Voltage Minimum ON Time
4-3 4-3 4-3 6-3
10.3 1.1 -
11.1 1.35 20 4
12.1 1.65 56 14
V V A A
Vcc=0 15V Vcc=10.2V Vcc=10.2V
6-3 1-2
0.55 0.65
1.1 1
1.5 1.35
V Sec
Vcc=15V -
Protection Operation
TON(MAX) VSSOLP(OLP) ISSOLP(OLP) VCC(OVP) ICC(H)
VCC(La.OFF)
Maximum ON Time OLP Operation Threshold Voltage OLP Operation Charging Current OVP Operation Voltage Latch Circuit Holding Current *5
1-3 5-3 5-3 4-3 4-3 4-3
27.5 4 -16 25.5 -6
32.5 4.9 -11 27.7 45 7.2
39 5.8 -6 29.9 140 8.5
Sec V A V
Vcc=030V Vcc=30 VCC(OFF)-0.3V Vcc=306V
A
V
Latch Circuit Release Voltage *5
*5 The latch circuit means a circuit operated O.V.P and O.L.P. *6 The current ratings are based on those of the IC , and plus(+) represents sink and minas(-) represents source.
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IRIS-X6757
Electrical characteristics for MOSFET (Ta=25 deg C) Ratings Symbol VDSS IDSS RDS(ON) tf ch-F Definition Drain-to-Source breakdown voltage Drain leakage current On-resistance Switching time Thermal resistance Terminals 1-2 1-2 1-2 1-2 MIN 650 TYP MAX 300 0.62 500 1.09 nSec /W Units V A Note
ID=300A VDS=650V ID=3.4A
Between channel and internal frame
IRIS-X6757
A.S.O. temperature derating coefficient curve
IRIS-X6757 MOSFET A.S.O. Curve 100
Drain current limit by ON resistance
100
A.S.O. temperature derating coefficient[%]
80
0.1ms
10 Drain Current ID[A]
1ms
60
1
40
0.1
20
ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use.
0 0 20 40 60 80 100 ] 120
0.01 1 10 100 1000 Drain-to-Source Voltage VDS[V]
Internal frame temperature TF [
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IRIS-X6757
IRIS-X6757 Avalanche energy derating curve EAS temperature derating coefficient [%] 100
80
60
40
20
0 25 50 75 100 Channel temperature Tch [ 125 ] 150
IRIS-X6757 MOSFET Ta-PD1 Curve 50 45 40 Power dissipation PD1[W] 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 ] 140 160
PD1=2.8[W] Without heatsink PD1=44[W] With infinite heatsink
Ambient temperature Ta[
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IRIS-W6753
IR IS -X 6 75 7 M IC T F-P D 2 C urve 0.9 0.8 0.7 Power dissipation PD2[W] 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 1 00 12 0 ] 14 0 1 60 In tern al fram e tem p eratu re T F[
IRIS-X6757 Transient thermal resistance curve
1 Transient thermal resistance ch-c[ /W]
0.1
0.01
0.001
1
10
100
time t [sec]
1m
10m
100m
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IRIS-X6757 Block Diagram
VCC
Reg& Iconst Start Stop Burst
Burst Control
Protection latch R Q S
DRIVE Reg
D
Delay
S GND FB
OVP
RQ S Q OSC MaxON
FB
S R
OCP
BSD BD
OCP/BD SS/OLP
OLP Soft Start
Bottom Selector Counter
Pin Designation
Pin No. 1 3 4 5 Symbols D S/GND VCC SS/OLP Descriptions Drain pin Source /Ground pin Power supply pin Delay at Overload /Soft Start set up Pin Feedback pin Overcurrent Protection Input / Bottom Detection Pin Functions MOSFET drain MOSFET Source / Ground Input of power supply for control circuit Overload Protection and Soft Start Operation Time set up Constant Voltage Control Signal Input, Burst(intermittent) mode Oscillation Control Overcurrent Detection Signal Input /Bottom Detection Signal Input
Pin Assignments
6
FB
7
OCP/BD
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IRIS-X6757 Case Outline

a Type Number W6753 b Lot Number 1st letter The last digit of year 2nd letter Month 1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec. 3rd & 4th letter Day Arabic Numerals Weight : Approx. 2.3g Dimensions in mm DWG.No. TG3A-2103

Material of Pin : Cu Treatment of Pin : Ni plating + solder dip
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information.
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